GaN-on-Si for power devices - GaN-on-Si for power device - GaN epiwafers - Product

中博芯

产品和服务中心

GaN-on-Si for power devices Specification Download

高耐压HEMT外延片，适用于快充等应用领域的功率器件制备

尺寸 4、6、8英寸

耐压 650V

方阻 350 ohm/sq

Details of GaN-on-Si for power devices

010-80490330

E-mail：sales@semigan.com

Address: Zone A1, floor 3, building 1, courtyard 15, Wenliang street, Shunyi District, Beijing

WeChat